NEGATIVE RESIST COMPOSITION USED IN PROCESS WHERE EXPOSURE IS PERFORMED USING AT LEAST TWO KINDS OF EXPOSURE LIGHT SOURCES SELECTED FROM G-LINE, I-LINE, KrF EXCIMER LASER, AND ELECTRON BEAM, AND RESIST PATTERN FORMING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a negative resist composition having sensitivity to a g-line, an i-line, a KrF excimer laser and an electron beam and usable in a mix and match process where exposure is performed using at least two kinds of exposure light sources selected from a g-line, an i-line, a KrF excimer laser and an electron beam, and to provide a resist pattern forming method.;SOLUTION: The negative resist composition used in a process where exposure is performed using at least two kinds of exposure light sources selected from a g-line, an i-line, a KrF excimer laser and an electron beam contains an alkali-soluble resin component (A), an acid generator component (B) which generates an acid upon irradiation with a g-line, an i-line, a KrF excimer laser and an electron beam, and a crosslinker component (C).;COPYRIGHT: (C)2007,JPO&INPIT