首页> 外国专利> Simulation method for a semiconductor device, a recording medium storing a simulation program of a method for manufacturing a semiconductor device and a semiconductor device using a simulation method of a semiconductor device

Simulation method for a semiconductor device, a recording medium storing a simulation program of a method for manufacturing a semiconductor device and a semiconductor device using a simulation method of a semiconductor device

机译:半导体器件的仿真方法,存储用于制造半导体器件的方法的仿真程序的记录介质以及使用半导体器件的仿真方法的半导体器件

摘要

PROBLEM TO BE SOLVED: To obtain a recording medium, which enables enhancement of the efficiency of semiconductor device development by setting a functional model which is in proportion to a power of carrier concentration and is inversely proportional to the power of impurity concentration. ;SOLUTION: A device simulation apparatus 1 is provided with an input portion 2 which accepts inputs, a process control portion 3 which performs simulative calculation, an output portion 4 which outputs the result of the calculation, a data storing portion 5 which stores specific data, and a program storing portion 6 which stores simulation programs and the like. The process control portion 3 is provided with a voltage/current setting means 7 for a terminal voltage or current conditions, a device characteristics calculating means 8, and a mobility calculating means 9. Fed with the impurity distribution and information, such as element structure of a semiconductor device obtained by process simulation, and with conditions set, the process control portion 3 simulatedly calculates the electrical characteristics of the elements. With use of a functional model, an effective mobility can be precisely reproduced over a wide range of impurity concentration by only one parameter set.;COPYRIGHT: (C)2001,JPO
机译:要解决的问题:获得一种记录介质,该记录介质能够通过设置与载流子浓度的幂成正比且与杂质浓度的幂成反比的功能模型来提高半导体器件开发的效率。 ;解决方案:设备仿真设备1具备接受输入的输入部分2,执行模拟计算的过程控制部分3,输出计算结果的输出部分4,存储特定数据的数据存储部分5程序存储部6存储模拟程序等。处理控制部3具有用于端子电压或电流条件的电压/电流设定单元7,器件特性计算单元8,迁移率计算单元9。其中,杂质的分布,信息等元素结构如表1所示。通过过程模拟获得的半导体器件,并在设置了条件的情况下,过程控制部3模拟地计算元件的电特性。使用功能模型,只需一个参数集,就可以在很宽的杂质浓度范围内精确地再现有效迁移率。; COPYRIGHT:(C)2001,JPO

著录项

  • 公开/公告号JP3943771B2

    专利类型

  • 公开/公告日2007-07-11

    原文格式PDF

  • 申请/专利权人 株式会社東芝;

    申请/专利号JP19990212512

  • 发明设计人 近藤 正樹;

    申请日1999-07-27

  • 分类号H01L29;H01L29/78;H01L21/336;H01L29/80;

  • 国家 JP

  • 入库时间 2022-08-21 21:10:57

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号