On the composite discontinuous Galerkin method for simulations of electric properties of semiconductor devices

摘要

In this paper two variants of discretization of the van Roosbroeck'sequations in equilibrium state with the Composite Discontinuous Galerkin Methodfor rectangular domain are discussed. They base on Weakly Over-PenalizedSymmertic Interior Penalty (WOPSIP) method and on Symmetric Interior PenaltyGalerkin (SIPG) method. It is shown that the discrete problems are well-defined and that theirsolutions are unique. Error estimates are derived. Finally numericalsimulations of gallium nitride semiconductor devices are presented.