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p-type GaAs substrate ZnSe-based avalanche photodiode and a p-type GaAs substrate ZnSe-based photodiode
p-type GaAs substrate ZnSe-based avalanche photodiode and a p-type GaAs substrate ZnSe-based photodiode
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机译:p型GaAs衬底ZnSe基雪崩光电二极管和p型GaAs衬底ZnSe基光电二极管
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摘要
A blue-ultraviolet on-p-GaAs substrate pin Zn 1-x Mg x S y Se 1-y photodiode with high quantum efficiency, small dark current, high reliability and a long lifetime. The ZnMgSSe photodiode has a metallic p-electrode, a p-GaAs single crystal substrate, a p-(ZnSe/ZnTe) m superlattice (m: integer number of sets of thin films), an optionally formed p-ZnSe buffer layer, a p-Zn 1-x Mg x S y Se 1-y layer, an i-Zn 1-x Mg x S y Se 1-y layer, an n-Zn 1-x Mg x S y Se 1-y layer, an n-electrode and an optionally provided antireflection film. Incidence light arrives at the i-layer without passing ZnTe layers. Since the incidence light is not absorbed by ZnTe layers, high quantum efficiency and high sensitivity are obtained. A blue-ultraviolet on-p-GaAs substrate avalanche Zn 1-x Mg x S y Se 1-y photodiode with high sensitivity, high quantum efficiency, a wide sensitivity range, high reliability and a long lifetime. The ZnMgSSe avalanche photodiode has a metallic p-electrode, a p-GaAs single crystal substrate, a p-(ZnSe/ZnTe) m superlattice (m: integer number of sets of thin films), an optionally formed p-ZnSe buffer layer, a p-Zn 1-x Mg x S y Se 1-y layer, a lower doped n - -Zn 1- x Mg x S y Se 1-y layer, a higher doped n + -Zn 1-x Mg x S y Se 1-y layer, an n-electrode and an optionally provided antireflection film. Since the incidence light is not absorbed by ZnTe layers, a high avalanche gain, high quantum efficiency and high sensitivity are obtained.
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机译:蓝紫外on-p-GaAs衬底引脚Zn 1-x Mg x S y Se 1-y光电二极管,具有高量子效率,小暗电流,高可靠性和长寿命。 ZnMgSSe光电二极管具有金属p电极,p-GaAs单晶衬底,p-(ZnSe / ZnTe)m超晶格(m:薄膜的整数组),可选形成的p-ZnSe缓冲层, p-Zn 1-x Mg x S y Se 1-y层,i-Zn 1-x Mg x S y Se 1-y层,n-Zn 1-x Mg x S y Se 1-y层, n电极和可选提供的减反射膜。入射光到达i层时不通过ZnTe层。由于入射光未被ZnTe层吸收,因此获得了高量子效率和高灵敏度。蓝紫外-p-GaAs衬底雪崩Zn 1-x Mg x S y Se 1-y光电二极管,具有高灵敏度,高量子效率,宽灵敏度范围,高可靠性和长寿命。 ZnMgSSe雪崩光电二极管具有金属p电极,p-GaAs单晶衬底,p-(ZnSe / ZnTe)m超晶格(m:薄膜的整数组),可选形成的p-ZnSe缓冲层, p-Zn 1-x Mg x S y Se 1-y层,较低掺杂的n--Zn 1-x Mg x S y Se 1-y层,较高掺杂n + -Zn 1-x Mg x S y Se 1-y层,n电极和可选提供的抗反射膜。由于入射光不被ZnTe层吸收,因此可获得高雪崩增益,高量子效率和高灵敏度。
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