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Method, apparatus, and computer program for the Monte Carlo ion implantation simulation, and semiconductor device manufacturing method based on the simulation
Method, apparatus, and computer program for the Monte Carlo ion implantation simulation, and semiconductor device manufacturing method based on the simulation
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机译:用于蒙特卡洛离子注入仿真的方法,装置和计算机程序,以及基于该仿真的半导体器件制造方法
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摘要
A Monte Carlo ion implantation simulation method includes finding a unit cell in which an implanted trial particle is present, finding a basic cell in which the trial particle is present among basic cells that form the unit cell, finding a directional range in which the trial particle travels, obtaining collision candidate atoms with their locations from a database according to the found basic cell and directional range, setting a thermal vibration displacement for each of the collision candidate atoms that has not set thermal vibration displacement, calculating a collision parameter and free-flight distance for each of the collision candidate atoms, selecting, as a collision atom, one of the collision candidate atoms that has a collision parameter smaller than a predetermined maximum collision parameter and a smallest positive free-flight distance, and calculating a collision between the trial particle and the collision atom to find the after-collision location and momentum of the trial particle.
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