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Direct imprinting of etch barriers using step and flash imprint lithography

机译:使用分步和闪光压印光刻技术直接刻蚀蚀刻阻挡层

摘要

A direct imprinting process for Step and Flash Imprint Lithography includes providing (40) a substrate (12); forming (44) an etch barrier layer (14) on the substrate; patterning (46) the etch barrier layer with a template (16) while curing with ultraviolet light through the template, resulting in a patterned etch barrier layer and a residual layer (20) on the substrate; and performing (48) an etch to substantially remove the residual layer. Optionally, a patterning layer (52) may be formed on the substrate (12) prior to forming the etch barrier layer (14). Additionally, an adhesive layer (13) may be applied (42) between the substrate (12) and the etch barrier layer (14).
机译:分步和快速压印光刻的直接压印工艺包括:提供( 40 )基材( 12 );在基板上形成( 44 )蚀刻阻挡层( 14 );用模板( 16 )对蚀刻阻挡层进行图案化( 46 ),同时通过模板通过紫外线固化,从而形成图案化的蚀刻阻挡层和残留层(< B> 20 )在基材上;并执行( 48 )蚀刻以基本去除残留层。可选地,可以在形成蚀刻阻挡层( 14 )之前在基板( 12 )上形成图案层( 52 )。此外,可以在基板( 12 )和蚀刻阻挡层()之间施加( 13 )粘合层( 42 )。 14 )。

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