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Microelectromechanical system device with piezoelectric thin film actuator.

机译:具有压电薄膜致动器的微机电系统装置。

摘要

A radio frequency (RF) micro electro-mechanical system (MEMS) device and method of making same are provided, the device including an RF circuit substrate and an RF conducting path disposed on the RF circuit substrate, a piezoelectric thin film actuator, and a conducting path electrode. The piezoelectric thin film actuator has a proximal end that is fixed relative to the RF circuit substrate and a cantilever end that is spaced from the RF circuit substrate. The conducting path electrode is disposed on the cantilever end of the piezoelectric thin film actuator. The cantilever end of the piezoelectric thin film actuator is movable between a first position whereat the conducting path electrode is spaced from the RF path electrode and a second position whereat the conducting path electrode is spaced from the RF path electrode a second distance, wherein the second distance is less than the first distance. The RF MEMS device is particularly useful as a tunable capacitor. The RF MEMS device requires lower operating voltage, and provides variable RF tuning capacity, fewer stiction problems, simplified fabrication, and an improved switching time.
机译:提供了一种射频(RF)微机电系统(MEMS)装置及其制造方法,该装置包括RF电路基板和设置在RF电路基板上的RF导电路径,压电薄膜致动器,以及导电路径电极。压电薄膜致动器具有相对于RF电路基板固定的近端和与RF电路基板隔开的悬臂端。导电路径电极设置在压电薄膜致动器的悬臂端上。压电薄膜致动器的悬臂端可在第一位置和第二位置之间移动,该第一位置处的导电路径电极与RF路径电极隔开,第二位置处的导电路径电极与RF路径电极隔开第二距离。距离小于第一距离。 RF MEMS器件特别可用作可调电容器。 RF MEMS器件需要较低的工作电压,并提供可变的RF调谐能力,更少的静摩擦问题,简化的制造过程以及更长的开关时间。

著录项

  • 公开/公告号ES2282713T3

    专利类型

  • 公开/公告日2007-10-16

    原文格式PDF

  • 申请/专利权人 RAYTHEON COMPANY;

    申请/专利号ES20030786748T

  • 申请日2003-11-14

  • 分类号B81B3/00;H01G5/16;H01H57/00;H01L41/09;H01L41/24;

  • 国家 ES

  • 入库时间 2022-08-21 20:54:21

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