Method of manufacturing a dielectric film and method of manufacturing Metal Insulator Metal capacitor having the dielectric film and batch type atomic layer deposition apparatus for manufacturing the dielectric film

摘要

Provided are methods of manufacturing dielectric films including forming a first dielectric film on a wafer using atomic layer deposition (ALD) in a first batch type apparatus, forming a second dielectric film on the first dielectric film using atomic layer deposition in a second batch type apparatus, wherein the second dielectric film has a higher crystallization temperature than the first dielectric film and forming a third dielectric film on the second dielectric film using atomic layer deposition in a third batch type apparatus. Methods of manufacturing metal-insulator-metal (MIM) capacitors using the methods of forming the dielectric films and batch type atomic layer deposition apparatus for forming the dielectric films are also provided.