FABRICATION METHOD OF GAN SUBSTRATE

摘要

A fabrication method of a GaN substrate is provided to remove pits in a GaN growth process by using a Ga migration process. A preparation process is performed to prepare a substrate(1). A heating process is performed to heat the substrate. A growth process is performed to grow GaN on a surface of the substrate by supplying GaCl and NH3 to the inside of the reactor. In the growth process, the growth of GaN is controlled by adjusting intermittently the supplying amount of the NH3. The growth process includes a process for supplying NH3 and a process for interrupting NH3. The substrate is formed with one of a sapphire substrate, a SiC substrate, and a GaN substrate.