TFT-LCD WITH TFT OF ASYMMETRY SOURCE/DRAIN STRUCTURE

摘要

PURPOSE: A thin film transistor liquid crystal display device having an asymmetric source/drain structure is to form carrier mobility and an electric field uniformly and prevent a degradation of a channel layer. CONSTITUTION: A gate line(2) and a data line(8) are crossed through a gate insulating layer. A pixel electrode(4) is formed within a predetermined pixel area defined by the gate line and the data line. A thin film transistor(10) includes a gate electrode(2a), a channel layer(3), the first and the second source electrodes(5a,5b) and a drain electrode(6). The gate electrode is extended from the gate line inwardly. The channel layer is formed on the gate electrode. The first and the second source electrodes are extended from the data line to thereby overlap with one side of the channel layer. The drain electrode, which is in contact with the pixel electrode, is overlapped with the other side of the channel layer.