Semiconductor element and production process especially for an insulated gate bipolar transistor has very highly doped region between low and highly oppositely doped regions

摘要

A semiconductor element comprises a semiconductor body (1,6) with a strongly doped zone (4) between to metallized layers (5) and a second, weakly and oppositely doped zone (1) and a pn-junction. Between these two zones is a region (16) that is so highly doped that its concentration is higher than that of the charge carrier of the overflow charge in the transmitting condition of the semiconductor. An independent claim is also included for a production process for the above.