Semiconductor component e.g. n-type metal oxide semiconductor, has substrate with active region, and charge producing layer is formed along boundary surface between active region and gate dielectric layer on substrate

摘要

The component has a semiconductor substrate (100) with an active region in which a conductive p-type channel is formed. A gate electrode (158) is formed on the active region, and a gate dielectric layer (142) is inserted between the region and the electrode. A charge producing layer (134) is formed along the boundary surface between the active region and the gate dielectric layer on the substrate. Negative fixed charges exist between the active region and the gate dielectric layer. An independent claim is also included for a method for manufacturing a semiconductor component.