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Hermetic passivation layer structure for capacitors with perovskite or pyrochlore phase dielectrics
Hermetic passivation layer structure for capacitors with perovskite or pyrochlore phase dielectrics
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机译:钙钛矿或烧绿石相电介质电容器的钝化钝化层结构
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摘要
A thin-film capacitor structure fabricated on a substrate is provided. The thin-film capacitor includes a pyrochlore or perovskite alkali earth dielectric layer between a plurality of electrode layers. A pyrochlore or perovskite hydrogen-gettering barrier layer is deposited over the thin-film capacitor. A hermetic seal layer is deposited over the barrier layer by plasma enhanced chemical vapor deposition (PECVD), low pressure chemical vapor deposition (LPCVD), or some other hydrogen-producing method. The hydrogen-gettering barrier layer prevents hydrogen from reacting with and degrading the properties of the dielectric material, thereby enhancing the durability and other features of the capacitor.
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