Manufacturing method of group III nitride substrate, group III nitride substrate, group III nitride substrate with epitaxial layer, group III nitride device, manufacturing method of group III nidtride substrate with epitaxial layer, and manufacturing method of group III nitride device

摘要

A manufacturing method of a group III nitride substrate (1, 2) by which a group III nitride substrate (1, 2) being excellent in flatness can be obtained includes the steps of: adhering a plurality of the stripe type group III nitride substrates to an abrading holder (53) so that a stripe structure direction is perpendicular to a rotation direction of the abrading holder (53); and grinding, lapping and/or polishing the substrates (1,2).