SOLAR CELL FABRICATION METHOD OF THIN SILICON WAFER USING THE NEGATIVE FIXED CHARGES IN ALUMINUM OXY-NITRIDE ON THIN FILMS

摘要

A method of fabricating a thin silicon solar cell using negative fixed charges in an oxy-nitride aluminum thin film is provided to reduce a manufacturing cost by reducing a thickness of a p- type silicon substrate. A surface of a p- type silicon substrate(110) is organized by etching a surface of the p- type silicon substrate. An n- type doping layer(120) is formed on the p- type silicon substrate. An anti-reflective coating(130) is formed on the n-type doping layer. An oxy-nitride aluminum insulating layer(140) having negative fixed charges is formed on a lower part of a rear surface of the p-type silicon substrate. A rear field layer(150) is locally formed on the p-type silicon substrate. A rear metal electrode(160) is formed along the rear field layer. A front metal electrode(170) is formed on the anti-reflective coating.