METHOD FOR DEPOSITING THIN FILM BY MIXED PULSED CVD AND ALD

摘要

PROBLEM TO BE SOLVED: To provide a method in which advantages of an ALD mode and a CVD mode are combined with each other.;SOLUTION: Atomic layer deposition (ALD) is used to deposit one layer and pulsed chemical vapor deposition (CVD) is used to deposit another layer. During the ALD part, sequential and alternating pulses of reactants are flowed. During the pulsed CVD part, two CVD reactants are flowed, with at least a first of the CVD reactants flowed in pulses, with those pulses overlapping at least partially with the flow of a second of the CVD reactants. In the present invention, e.g., nanolaminate films can be formed. Preferably, high quality layers are formed by flowing the second CVD reactant into a reaction chamber for a longer total duration than the first CVD reactant. In some embodiments, the pulses of the third reactant at separated by a duration at least about 1.75 times the length of the pulse. Preferably, less than about 8 monolayers of material are deposited per pulse of the first CVD reactant.;COPYRIGHT: (C)2009,JPO&INPIT