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摘要

PROBLEM TO BE SOLVED: To provide a method for controlling a high electron mobility transistor (HEMT) through a cascode circuit.;SOLUTION: The cascode circuit according to the present invention comprises a first and second switch, a condenser connected to a source of the first switch, a source of a HEMT connected to a drain of the first switch, and a controller controlling the first and second switch. This method can be obtained by defining a state A in which it is controlled that the first switch is OFF and the second switch is ON and the condenser is allowed to be charged, thereby stabilizing a drain voltage of the HEMT around a HEMT gate threshold voltage. The method further defines a state B in which it is controlled that the first switch is ON and the second switch is substantially OFF, and a charge accumulated in the condenser is maintained. By changing the states, further the method allows an output capacitance of the first switch from the condenser to be more rapidly charged.;COPYRIGHT: (C)2007,JPO&INPIT