Polycrystalline Silicon Substrate, Method for Producing Same, Polycrystalline Silicon Ingot, Photoelectric Converter and Photoelectric Conversion Module

摘要

Disclosed is a polycrystalline silicon substrate having a region wherein concentrations of impurities contained therein satisfy the following relations: [Oi]≧2E17 [atoms/cm³] (under condition 1a and [C]≦1E17 [atoms/cm³] (Condition 2)) where [Oi] is the interstitial oxygen concentration determined by Fourier transform infrared spectroscopy and [C] is the total carbon concentration determined by secondary ion mass spectrometry. This polycrystalline silicon substrate has high strength adequate for a thinner substrate, while having good quality and high photoelectric conversion efficiency. Such a polycrystalline silicon substrate enables to produce a resource-saving, highly efficient polycrystalline silicon solar cell at low cost.