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ATOMIC LAYER DEPOSITION OF Hf3N4/HfO2 FILMS AS GATE DIELECTRICS
ATOMIC LAYER DEPOSITION OF Hf3N4/HfO2 FILMS AS GATE DIELECTRICS
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机译:Hf3N4 / HfO2薄膜作为门电介质的原子层沉积
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摘要
The use of atomic layer deposition (ALD) to form a dielectric layer of hafnium nitride (Hf3N4) and hafnium oxide (HfO2) and a method of fabricating such a combination gate and dielectric layer produces a reliable structure for use in a variety of electronic devices. Forming the dielectric structure includes depositing hafnium oxide using precursor chemicals, followed by depositing hafnium nitride using precursor chemicals, and repeating to form the laminate structure. Alternatively, the hafnium nitride may be deposited first followed by the hafnium nitride. Such a dielectric layer may be used as the gate insulator of a MOSFET, a capacitor dielectric in a DRAM, or a tunnel gate insulator in flash memories, because the high dielectric constant (high-k) of the film provides the functionality of a thinner silicon dioxide film, and because of the reduced leakage current when compared to an electrically equivalent thickness of silicon dioxide.
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机译:使用原子层沉积(ALD)形成氮化ha(Hf 3 Sub> N 4 Sub>)和氧化ha(HfO 2 Sub>)的介电层)和制造这种组合的栅极和介电层的方法产生了一种可靠的结构,可用于各种电子设备。形成介电结构包括使用前体化学物质沉积氧化f,然后使用前体化学物质沉积氮化ha,并重复以形成层压结构。或者,可以先沉积氮化ha,然后沉积氮化ha。这样的介电层可以用作MOSFET的栅极绝缘体,DRAM中的电容器电介质或闪存中的隧道栅极绝缘体,因为薄膜的高介电常数(high-k)提供了更薄的功能。二氧化硅薄膜,并且由于与同等厚度的二氧化硅相比降低了泄漏电流。
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