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Method of forming an oxygen- or nitrogen-terminated silicon nanocrystalline structure and an oxygen- or nitrogen-terminated silicon nanocrystalline structure formed by the method
Method of forming an oxygen- or nitrogen-terminated silicon nanocrystalline structure and an oxygen- or nitrogen-terminated silicon nanocrystalline structure formed by the method
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机译:形成氧或氮封端的硅纳米晶结构的方法以及通过该方法形成的氧或氮封端的硅纳米晶结构
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摘要
An oxygen- or nitrogen-terminated silicon nanocrystalline structure is formed on a silicon substrate by forming a silicon film of fine silicon crystals and amorphous silicon on a substrate, and oxidizing or nitriding the formed silicon film with ions and radicals formed from an oxidizing gas or a nitriding gas. The oxidizing or nitriding step comprises substeps of disposing the substrate provided with the silicon film in an oxidizing or nitriding gas atmosphere within a plasma treatment chamber, and then plasma-oxiziding or plasma-nitriding the substrate provided with the silicon film by applying a high frequency electric field to the oxidizing or nitriding gas atmosphere. The method allows the particle diameter of the oxygen- or nitrogen-terminated silicon nanocrystals to be regulated to an accuracy of 1 to 2 nm, the density thereof per unit area to be increased, and the silicon nanocrystalline structure to be produced easily and inexpensively.
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