MODULATING THE STRESS OF POLY-CRYSTALINE SILICON FILMS AND SURROUNDING LAYERS THROUGH THE USE OF DOPANTS AND MULTI-LAYER SILICON FILMS WITH CONTROLLED CRYSTAL STRUCTURE

摘要

Modulating the stress of poly-crystalline silicon films and surrounding layers through the use of dopants and multi-layer silicon films with controlled crystal structure are provided to improve the mobility of the carrier. The substrate(79) is located in the deposition chamber. The first process gas including silicon source gas is supplied inside the deposition chamber. Therefore, the amorphous silicon film(406) is formed in the top of the substrate. In the first temperature, the first dilute gas mixture and the first process gas are supplied inside the deposition chamber. Therefore, the polysilicon layer(408) is formed on the amorphous silicon film. Here, the first dilute gas mixture comprises the inert gas and H2.