MEMORY DEVICE AND MRAM USING SPIN-VALVE MAGNETORESISTIVE ELEMENT WITH PERPENDICULAR MAGNETIC ANISOTROPY

摘要

One memory and MRAM (Magnetorresistive random access memorys) are provided, power consumption is significantly decreased, is used for by using Pd layers of ferromagnetic layer or the registration of ferromagnetic layer/Pd layers of plural layers. One memory includes magnetic resistance element (1,2) and magnetic filed generation unit (900). Magnetic resistance element has spin valve type. Magnetic resistance element includes free layer, nonmagnetic layer, fixing layer and iron-resistant material layer. Pd layers/first ferromagnetic layer or the first ferromagnetic layer/Pd layers are repeatedly stored in each free layer and fixing layer. First ferromagnetic layer is vertically magnetized on Pd layers of side.