首页> 外国专利> MANUFACTURING METHOD OF BACK CONTACT SINGLE HETEROJUNCTION-TYPE SOLAR BATTERY, AND BACK CONTACT SINGLE HETEROJUNCTION-TYPE SOLAR BATTERY

MANUFACTURING METHOD OF BACK CONTACT SINGLE HETEROJUNCTION-TYPE SOLAR BATTERY, AND BACK CONTACT SINGLE HETEROJUNCTION-TYPE SOLAR BATTERY

机译:背面接触单异质结型太阳能电池的制造方法及背面接触单异质结型太阳能电池

摘要

PPROBLEM TO BE SOLVED: To provide a back contact single heterojunction-type solar battery and a manufacturing process thereof. PSOLUTION: In the manufacturing method of this solar battery, at first, there is provided a first semiconductor substrate doped with a first dopant-type in a low concentration. The substrate has a first energy band gap. Next, in a region of the backside of the substrate, a second semiconductor film is formed. The second semiconductor film has a second energy band gap larger than the first energy band gap. On the surface of the substrate, there is formed a third semiconductor layer doped with the first dopant in a medium concentration and subjected to a small convex and concave processing. On the backside of the substrate, there are formed an emitter doped with a second dopant-type having a polarity reverse to that of the first dopant type in a high concentration and a base doped with the first dopant-type in a high concentration. The base and the emitter are electrically connected with each other. Any one of the base and the emitter is formed on the base and the emitter. PCOPYRIGHT: (C)2010,JPO&INPIT
机译:

要解决的问题:提供背接触单异质结型太阳能电池及其制造方法。

解决方案:首先,在该太阳能电池的制造方法中,提供了以低浓度掺杂有第一掺杂剂型的第一半导体基板。衬底具有第一能带隙。接下来,在基板的背面的区域中,形成第二半导体膜。第二半导体膜具有大于第一能带隙的第二能带隙。在衬底的表面上,形成第三半导体层,该第三半导体层以中等浓度掺杂有第一掺杂剂,并且经过小的凸凹处理。在衬底的背面上,形成有掺杂有第二掺杂剂类型的发射极,该第二掺杂剂类型具有与高浓度的第一掺杂剂类型相反的极性,该掺杂剂的基极掺杂有高浓度的第一掺杂剂类型。基极和发射极彼此电连接。基极和发射极中的任何一个形成在基极和发射极上。

版权:(C)2010,日本特许厅&INPIT

著录项

  • 公开/公告号JP2010219527A

    专利类型

  • 公开/公告日2010-09-30

    原文格式PDF

  • 申请/专利权人 SHARP CORP;

    申请/专利号JP20100050968

  • 申请日2010-03-08

  • 分类号H01L31/04;

  • 国家 JP

  • 入库时间 2022-08-21 19:03:30

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