首页>
外国专利>
NONDESTRUCTIVE CHARACTERIZATION OF THIN FILMS USING MEASURED BASIS SPECTRA AND/OR BASED ON ACQUIRED SPECTRUM
NONDESTRUCTIVE CHARACTERIZATION OF THIN FILMS USING MEASURED BASIS SPECTRA AND/OR BASED ON ACQUIRED SPECTRUM
展开▼
机译:基于测量的光谱和/或基于获得的光谱的薄膜的非破坏性表征
展开▼
页面导航
摘要
著录项
相似文献
摘要
The present invention provides for characterization of a film (e.g., thickness determination for a silicon oxynitride film) using a comparison process (e.g., a fitting process) to compare measured peak shapes for elemental and/or chemical species (e.g., Si peak shapes previously measured for a particular process to be monitored) to collected spectral data (e.g., using a non-linear least squares fitting algorithm). Further, the present invention provides for characterization of a film (e.g., thickness determination for a silicon oxynitride film) using collected spectral data. For example, an acquired spectrum may be cumulatively integrated and the geometric properties of the integrated spectrum may be used to determine component concentration information. Thickness measurements for the film may be provided based on the component concentration information.
展开▼