METAL TRACE MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE AND THE METAL TRACE

摘要

PURPOSE: A method for manufacturing the metal trace of a semiconductor device and the metal trace are provided to secure the margin of a manufacturing process by applying a damascene technique which is used for copper trace to an aluminum trace. CONSTITUTION: A first photo-resist is applied on a dielectric layer(112) which covers a lower metal trace(111). The dielectric layer with the first photo-resist is exposed using a first mask. A first pattern is formed by etching. The dielectric layer which is exposed through the outer circumference of the first pattern is etched to form a trench(117). The first pattern is removed. A metal layer is deposited on the dielectric layer including the trench. A second photo-resist is applied on the metal layer. After exposure process with a second mask is performed, the metal layer with the second photo-resist is etched to form a second pattern. The metal layer which is exposed through the outer circumference of the second pattern is etched to form a metal trace(122).