METHOD FOR MANUFACTURING A PHOTOMASK USING A LASER 2ND PROCESS, CAPABLE OF IMPROVING THE RESOLUTION OF AN AUXILIARY PATTERN ABOVE 20 nm WITHOUT AFFECTING A MAIN PATTERN

摘要

PURPOSE: A method for manufacturing a photomask using a laser 2nd process is provided to prevent collapse or shortage of a line by removing a dummy pattern through the laser 2nd process even through the width of the line is shortened.;CONSTITUTION: A main pattern(122) and a SRAF(Sub Resolution Assist Feature) are formed on the same plane. The main pattern forms an image by a design rule. The SRAF corrects optical proximity effect when forming the main pattern. A part of the SRAF is removed.;COPYRIGHT KIPO 2010