INGOT COOLING UNIT AND A SINGLE CRYSTAL INGOT GROWING DEVICE INCLUDING THE SAME, CAPABLE OF REDUCING A GENERATION RATE OF A CRYSTAL DEFECT BY CONTROLLING A COOLING SPEED

摘要

PURPOSE: An ingot cooling unit and a single crystal ingot growing device including the same are provided to improve a cooling rate of the ingot by forming a heat absorption layer on the surface of a cooling material.;CONSTITUTION: Ingot is inputted and outputted in a growing chamber(110). A crucible(120) is installed inside the growing chamber and receives a silicon solution. A heating element(130) heats the silicon solution inside the crucible. A cooling material cools down the ingot which is grown in contact with the heated silicon solution. A heat absorption layer increase the absorption of heat radiated from the ingot.;COPYRIGHT KIPO 2010