Fabrication method of transparent gate electrode for field effect transistor using carbon nanotube and Field effect transistor fabricated by the same

摘要

A method of fabricating transparent gate electrode for field effect transistor using carbon nanotube and a field effect transistor fabricated by the same are provided to form a uniform carbon nanotube thin film by using a chemical treatment using a acid solution. Provided is the carbon nanotube aqueous solution which is functional as the carboxyl group(-COOH) through the chemical treatment. The carbon nanotube is dipped into the mixture of a nitric acid and sulfuric acid for predetermined time by using a sonicator. The volume ratio of the nitric acid and sulfuric acid is 4:1. The polymer substrate(20) is processed and the surface of the membranous polymers substrate is functional as the amine radical. To form the carbon nanotube thin film for a gate electrode on the membranous polymers substrate, the polymer substrate which is functional as the amine radical is put into the carbon nanotube aqueous solution for a predetermined time. The membranous polymers substrate is PES(Polyethylenesulfonate).