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Semi conductor liquid material's active layer depositing method for manufacturing copper-indium-gallium-selenium type solar cell, involves depositing active layer on support layer made of indium and gallium having undergone friction step
Semi conductor liquid material's active layer depositing method for manufacturing copper-indium-gallium-selenium type solar cell, involves depositing active layer on support layer made of indium and gallium having undergone friction step
The method involves depositing an active layer on a support layer made of indium (5) and gallium (3) having undergone a friction step before the deposition of the active layer, where the active layer is presented in a form of nano particles. The friction step is carried out using a cloth i.e. velvet cloth. The support layer is formed by depositing liquid mixture made of indium and gallium on a substrate (1) e.g. strip steel, where thickness of the support layer is lower or equal to 100 nanometers. The substrate is covered with a molybdenum layer (2) before the deposition of the support layer. The active layer comprises material selected from a group consisting of metal sulfides, metal selenides, sulfur and selenium.
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