Nitride and integrated device based on silicon carbide, and a method of fabricating an integrated device based on nitride

摘要

Monolithic electronic device comprising a nitride epitaxial layer in common is provided. Nitride devices of the first type is provided, including a region of the n-type ion implanted at least one of the first nitride epitaxial layer on which the common nitride epitaxial layer to the common, at least in the first region of the n-type ion implanted one, at least one ion of the second nitride epitaxial layer having a doping concentration of the first higher than the doping concentration of the nitride epitaxial layer to the common and the common nitride devices of the second type containing different regions of the n-type are implanted, the nitride device of the first type is provided, the region of the n type ion implanted at least one of the second, Unlike the first region of the n type ion implanted at least one, and has a doping concentration higher than the first doping concentration of the nitride epitaxial layer to the common. Electrical contacts of the first is provided with a plurality of the regions of the n-type ion implanted at least one of said first contact of the first plurality are of the first nitride devices of the first type I want to form an electronic device. Electrical contacts of the second multiple is provided in the region of the n-type ion implanted at least one of the first contacts of the second plurality of these, the second nitride devices of the second type I want to form an electronic device. Corresponding method is also disclosed.