The residue removal liquid after the semiconductor dry processing and the residue removal methodological null dry etching which uses

摘要

The present invention provides a residue-removing solution after a dry process suppression of cracking of a small Cu surface without damaging the Low-k film and Cu, could not have been resolved in the polymer stripping solution of conventional as possible, I want to establish a method of manufacturing a semiconductor device using the same. Specifically, there is provided a removing solution of the residue present on the semiconductor substrate after dry etching and / or ashing, a strong acid capable of forming a chelate or complex with Cu, a polycarboxylate, and in that it comprises the water residue-removing solution, which is characterized, and relates to a process for removing residues present in the semiconductor substrate after ashing and dry etching using the residue removal or liquid /.