Baseplate for epitaxial growth, production method of GaN semiconductor film, GaN semiconductor film, production method and GaN semiconductor luminous element of GaN semiconductor luminous element

摘要

The baseplate for epitaxial growth of this invention, in order 120 degrees at a time to possess the other convex section where each one 3 touches recently the GaN semiconductor the surface part making provision for, the monocrystal section which consists of the material which differs as a surface for epitaxial growth at least, in the direction which differs the plural convex sections and each one which are arranged the plural growth spaces which are encircled by 6 above-mentioned convex sections and, it possesses the unevenness aspect which consists of, above-mentioned monocrystal section has exposed at least in above-mentioned growth space, the GaN semiconductor crystal which c axial orientation is done becoming growth possible from the above-mentioned growth space with thatIt is.