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Method for Forming an Independent Bottom Gate Connection For Buried Interconnection Including Bottom Gate of a Planar Double Gate MOSFET
Method for Forming an Independent Bottom Gate Connection For Buried Interconnection Including Bottom Gate of a Planar Double Gate MOSFET
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机译:用于包括平面双栅MOSFET的底栅的埋线互连的独立底栅连接的形成方法
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摘要
A method is provided for making a semiconductor device, which comprises (a) providing a semiconductor structure comprising a top gate (228) and a bottom gate (240); (b) creating first (251), second and third (252) openings in the semiconductor structure, wherein the first opening exposes a portion of the bottom gate; (c) filling the first, second and third openings with a conductive material, thereby forming source (258) and drain (260) regions in the second and third openings and a conductive region (253) in the first opening; and (d) forming an electrical contact (278) to the conductive region.
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