首页> 外国专利> ACIDIC BATH FOR ELECTROLYTICALLY DEPOSITING A COPPER DEPOSIT CONTAINING HALOGENATED OR PSEUDOHALOGENATED MONOMERIC PHENAZINIUM COMPOUNDS

ACIDIC BATH FOR ELECTROLYTICALLY DEPOSITING A COPPER DEPOSIT CONTAINING HALOGENATED OR PSEUDOHALOGENATED MONOMERIC PHENAZINIUM COMPOUNDS

机译:酸性镀液,用于电解沉积含卤化或伪卤化的单价苯并铜化合物的铜矿床

摘要

FOR MANUFACTURING PARTICULARLY UNIFORM AND MIRROR BRIGHT COPPER COATINGS THAT ARE LEVELED AND DUCTILE AS WELL USING A RELATIVELY HIGH CURRENT DENSITY, HALOGENATED OR PSEUDOHALOGENATED MONOMERIC PHENAZINIUM COMPOUNDS OF A PURITY OF AT LEAST 85 MOLE-% AND HAVING THE GENERAL CHEMICAL FORMULA I ARE UTILIZED IN WHICH R1, R², R4, R5, R6, R7', R7", R8, R9, X AND A- HAVE THE SIGNIFICATIONS DENOTED IN THE CLAIMS. THE COMPOUNDS ARE PREPARED BY DIAZOTIZING A SUITED STARTING COMPOUND PRIOR TO HALOGENATING OR PSEUDOHALOGENATING IT IN THE PRESENCE OF MINERAL ACID, DIAZOTIZATION MEANS AND HALIDE OR PSEUDOHALIDE, WITH THE REACTION STEPS BEING RUN IN ONE SINGLE VESSEL.I
机译:为了制造出水平和延展的特殊均匀和镜面光亮的铜涂层,并使用相对较高的电流密度,经卤化或伪卤化的单价苯酚类化合物,其纯度为几百亿分之几的纯度。 R1,R²,R4,R5,R6,R7',R7”,R8,R9,X和A-具有在声明中指定的含义。这些化合物是通过将合适的起始化合物进行缩醛化来制备的,该化合物应先进行卤代或假卤代化。矿物酸,重氮化手段和卤化物或伪卤化物的存在,反应步骤在一个单一容器中进行

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