METHOD FOR MANUFACTURING TRANSPARENT CONDUCTIVE FILM, METHOD FOR MANUFACTURING SEMICONDUCTOR LIGHT EMITTING ELEMENT, SEMICONDUCTOR LIGHT EMITTING ELEMENT, LAMP, METHOD FOR MANUFACTURING TRANSPARENT CONDUCTIVE BASE BODY, TRANSPARENT CONDUCTIVE BASE BODY, AND ELECTRONIC APPARATUS

摘要

Disclosed is a method for manufacturing a transparent conductive film, by which a transparent conductive film containing a titanium oxide (TiO₂) material is formed using a sputtering method. The film is formed by sputtering at a film-forming speed of 0.01-1.0 nm/sec using a target which contains a titanium oxide material containing a dopant element at a ratio of 30 mass% or less, in sputtering atmosphere wherein at least 0.1-10 vol% of oxygen is contained and the rest contains an inert gas, then, the film is annealed at a temperature of 250°C or above.