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METHODS AND APPARATUS FOR FORMING MEMORY LINES AND VIAS IN THREE DIMENSIONAL MEMORY ARRAYS USING DUAL DAMASCENE PROCESS AND IMPRINT LITHOGRAPHY
METHODS AND APPARATUS FOR FORMING MEMORY LINES AND VIAS IN THREE DIMENSIONAL MEMORY ARRAYS USING DUAL DAMASCENE PROCESS AND IMPRINT LITHOGRAPHY
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机译:使用双Damascene过程和隐式光刻术在三维记忆阵列中形成记忆线和通孔的方法和装置
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摘要
The present invention provides systems, apparatus, and methods for forming three dimensional memory arrays using a multi-depth imprint lithography mask and a damascene process. An imprint lithography mask for manufacturing a memory layer in a three dimensional memory is described. The mask includes a translucent material formed with features for making an imprint in a transfer material to be used in a damascene process, the mask having a plurality of imprint depths. At least one imprint depth corresponds to trenches for forming memory lines and at least one depth corresponds to holes for forming vias. Numerous other aspects are disclosed.
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