GROWTH RATE IMPROVING METHOD WHICH CONTROLS THE LOCATION OF A SOLID-LIQUID INTERFACE WHEN A SILICON AND GERMANIUM SOLAR SEMICONDUCTOR IS GROWN, CAPABLE OF IMPROVING GROWTH SPEED BY IMPROVING THE DRIVING POWER OF A SINGLE CRYSTAL GROWTH

摘要

PURPOSE: A growth rate improving method is provided to improve productivity by improving temperature gradients of a solid-liquid interface and rapidly solidifying a melt solution.;CONSTITUTION: A solid-liquid interface is located in a location having temperature gradients inside a heating element(10). A melt solution is rapidly coagulated by increasing the temperature gradients after controlling the location(11) of the solid-liquid interface and raising it higher than a part where the temperature of the heating element is highest. The productivity of a silicon single crystal is improved by improving a crystallization speed.;COPYRIGHT KIPO 2011