首页> 外国专利> PHOTO-MASK INCLUDING A TRANSMITTANCE REGULATING PATTERN AND A METHOD FOR REGULATING THE TRANSMITTANCE OF THE PHOTO-MASK, CAPABLE OF IMPROVING THE UNIFORMITY OF CRITICAL DIMENSIONS BY REGULATING THE CRITICAL DIMENSIONS OF A PATTERN TO A DESIRED DIRECTION

PHOTO-MASK INCLUDING A TRANSMITTANCE REGULATING PATTERN AND A METHOD FOR REGULATING THE TRANSMITTANCE OF THE PHOTO-MASK, CAPABLE OF IMPROVING THE UNIFORMITY OF CRITICAL DIMENSIONS BY REGULATING THE CRITICAL DIMENSIONS OF A PATTERN TO A DESIRED DIRECTION

机译:包括透射率调节图案的光罩和调节光罩透射率的方法,能够通过将图案的临界尺寸调节为所需的方向来改善临界尺寸的均匀性

摘要

PURPOSE: A photo-mask including a transmittance regulating pattern and a method for regulating the transmittance of the photo-mask are provided to effectively regulate the transmittance of the photo-mask without the damage of the photo-mask by inserting a trench shaped pattern to the edge part of a cell block.;CONSTITUTION: A plurality of cell patterns(410) is arranged in the cell region of a transparent substrate(400). A transmittance regulating pattern(420) is arranged around the cell region, in which the cell patterns are arranged, in order to regulate the transmittance of photo-mask. The transmittance regulating pattern is formed into a trench shape. The etched depth(d) of the transmittance regulating pattern is a depth which is capable of reversing the phase of transmitted light as much as 180 degrees.;COPYRIGHT KIPO 2011
机译:目的:提供一种包括透射率调节图案的光掩模以及一种用于调节光掩模的透射率的方法,以通过在其上插入沟槽形图案来有效地调节光掩模的透射率而不会损坏光掩模。组成:组成:在透明基板(400)的单元区域中布置多个单元图案(410)。为了调节光掩模的透射率,在其中布置有单元图案的单元区域周围布置透射率调节图案(420)。透射率调节图案形成为沟槽形状。透射率调节图案的蚀刻深度(d)是能够使透射光的相位反转多达180度的深度。; COPYRIGHT KIPO 2011

著录项

  • 公开/公告号KR20110001144A

    专利类型

  • 公开/公告日2011-01-06

    原文格式PDF

  • 申请/专利权人 HYNIX SEMICONDUCTOR INC.;

    申请/专利号KR20090058547

  • 发明设计人 YOU TAE JUN;

    申请日2009-06-29

  • 分类号H01L21/027;

  • 国家 KR

  • 入库时间 2022-08-21 17:52:48

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