首页> 外国专利> High aspect ratio microstructure and method of fabricating the same and high aspect ratio microstructure array and method of fabricating the same

High aspect ratio microstructure and method of fabricating the same and high aspect ratio microstructure array and method of fabricating the same

机译:高深宽比微结构及其制造方法以及高深宽比微结构阵列及其制造方法

摘要

method of manufacturing a high aspect ratio microstructure of the present invention having the groove pattern on the surface of the transparent substrate, a photomask attachment step of attaching a photomask and a photoresist attachment step of attaching a negative photoresist to one surface of the photomask, a negative picture on the other side of the attachment portion of the transparent substrate is a photomask is irradiated with light through the pattern groove and curing the exposed portion of the negative photoresist with the light irradiated to the resist, to remove the unexposed portions of the negative photoresist is a negative photoresist is cured characterized in that it comprises a development step that reveals a microstructure made. According to the present invention, can be inexpensive and easy to prepare a fine structure by using a photolithography process.
机译:本发明的高深宽比微结构的制造方法,其特征在于,在透明基板的表面上具有槽图案,将光掩模安装在光掩模上的步骤,以及将负性光致抗蚀剂附着在光掩模的一个面上的光致抗蚀剂的步骤,透明基板的附着部分的另一侧上的负片是光掩膜,该光掩膜通过图案凹槽照射光,并用照射到抗蚀剂的光固化负性光刻胶的曝光部分,以去除负片的未曝光部分。光致抗蚀剂是被固化的负性光致抗蚀剂,其特征在于,它包括显影步骤,该步骤揭示出所制成的微结构。根据本发明,可以便宜并且容易通过使用光刻工艺来制备精细结构。

著录项

  • 公开/公告号KR101016007B1

    专利类型

  • 公开/公告日2011-02-23

    原文格式PDF

  • 申请/专利权人

    申请/专利号KR20080062547

  • 发明设计人 이석우;이정아;이승섭;

    申请日2008-06-30

  • 分类号B82B3/00;G03F7/20;B82Y40/00;

  • 国家 KR

  • 入库时间 2022-08-21 17:50:35

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