Method for manufacturing flash memory device of 3D stacked cell structure using low temperature process and flash memory device of 3D stacked cell structure

摘要

PURPOSE: A method for manufacturing a flash memory device of a 3d laminated cell structure is provided to form a channel area using a liquid oxide semiconductor material, thereby easily manufacturing a flash memory cell at a low temperature. CONSTITUTION: A semiconductor substrate(301) comprises source-drain regions(310,320). The first floating gate layer(307) and the first control gate layer(303) are formed on the semiconductor substrate. An upper channel layer(368) is formed on the first control gate layer. The second floating gate layer(365) is formed on the upper channel layer. The second control gate layer(363) is formed on the second floating gate layer.