METHOD FOR FORMING THE ORGANIC-INORGANIC COMPOSITE GATE INSULATING FILM OF AN ORGANIC THIN FILM TRANSISTOR WITH LITTLE LEAKED CURRENT GENERATION AND A BIG DIELECTRIC CONSTANT AND THE ORGANIC-INORGANIC COMPOSITE TYPED GATE INSULATING FILM OF AN ORGANIC THIN FILM TRANSISTOR USING THE SAME

摘要

PURPOSE: A method for forming the organic-inorganic composite gate insulating film of an organic thin film transistor and the organic-inorganic composite typed gate insulating film of an organic thin film transistor using the same are provided to simply form the gate insulation layer of a organic thin film transistor with a low cost, easily coat the surface, and efficiently apply to a substrate with a high molecule which is flexible and hard to be processed at a high temperature.;CONSTITUTION: The carbon number of an alkyl group dissolves the alkyl alkoxide of 1 to 20 metallic oxides and an insulating organic polymer in an organic solvent and prepares organic-inorganic composite solutions for forming a gate dielectric layer. Organic-inorganic composite solutions are spread in the substrate of an organic thin film transistor and form a coating layer. An organic solvent is dried in the coating layer and an organic-inorganic composite gate insulating layer is formed.;COPYRIGHT KIPO 2011