Semiconductor wafer repolishing method for e.g. memory element, involves effecting concave/convex erosion profile when polished semiconductor wafer exhibits concave/convex thickness profile during repolishing sides of wafer

摘要

The method involves evaluating whether a reciprocally polished semiconductor wafer exhibits a concave or convex thickness profile. Front and rear sides of the reciprocally polished semiconductor wafer are simultaneously repolished by a polishing machine with a polishing agent in polishing duration. A concave erosion profile is effected when the polished semiconductor wafer exhibits the concave thickness profile, or a convex erosion profile is effected when the polished semiconductor wafer exhibits the convex thickness profile during repolishing the sides of the wafer.