首页> 外国专利> Method of manufacturing a nozzle plate manufacturing method of the droplet discharge head, method for manufacturing a droplet discharge device, the nozzle substrate, the droplet discharge head and liquid ejection apparatus

Method of manufacturing a nozzle plate manufacturing method of the droplet discharge head, method for manufacturing a droplet discharge device, the nozzle substrate, the droplet discharge head and liquid ejection apparatus

机译:液滴排出头的喷嘴板的制造方法,液滴排出装置的制造方法,喷嘴基板,液滴排出头以及液体喷射装置

摘要

PROBLEM TO BE SOLVED: To provide the process of producing a nozzle substrate which can adjust the nozzle length properly, and can enhance liquid drop ejection performance by ensuring smooth flow of the liquid drop without stagnation.;SOLUTION: The process for producing a nozzle substrate comprises the step of forming an oxide film 101 having such a composition as the etching rate becomes slower toward the silicon base material 100 side, the step of coating the portion on the oxide film 101 excepting a part corresponding to a first nozzle hole 110a with resist 102, and forming the truncated conical first nozzle hole having a diameter being reduced toward the silicon base material 100 by wet etching the oxide film 101, the step of forming a substantially cylindrical second nozzle hole 110b by dry etching the silicon base material 100 from the reduced diameter side of the first nozzle hole 110a provided in the oxide film 101, the step of forming the second nozzle hole 110b through the silicon base material 100 by grinding it from the side opposite to side where the oxide film 101 is provided, and the step of forming the nozzle hole.;COPYRIGHT: (C)2008,JPO&INPIT
机译:解决的问题:提供一种喷嘴基板的制造方法,该基板能够适当地调节喷嘴长度,并且通过确保液滴的平稳流动而不会停滞地提高液滴的喷射性能。解决方案:喷嘴基板的制造方法包括形成具有这样的组成的氧化物膜101的步骤:向硅基材100侧蚀刻速率变慢,该步骤包括用抗蚀剂涂覆氧化物膜101上除第一喷嘴孔110a对应的部分之外的部分。然后,如图102所示,通过对氧化物膜101进行湿蚀刻而形成朝着硅基材料100减小直径的圆锥台状的第一喷嘴孔,通过从硅基材料100对硅基材料100进行干蚀刻来形成大致圆筒状的第二喷嘴孔110b。设置在氧化膜101中的第一喷嘴孔110a的直径减小侧,通过硅形成第二喷嘴孔110b的步骤从设置有氧化膜101的一侧相反的一侧研磨图标基材100,以及形成喷嘴孔的步骤。版权所有:(C)2008,JPO&INPIT

著录项

  • 公开/公告号JP5050743B2

    专利类型

  • 公开/公告日2012-10-17

    原文格式PDF

  • 申请/专利权人 セイコーエプソン株式会社;

    申请/专利号JP20070231422

  • 发明设计人 原田 光明;

    申请日2007-09-06

  • 分类号B41J2/135;B41J2/045;B41J2/055;

  • 国家 JP

  • 入库时间 2022-08-21 17:42:14

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