Silicon crystal growth crucible, crucible manufacturing method for silicon crystal growth, and silicon crystal growth method

摘要

PROBLEM TO BE SOLVED: To provide a crucible for growing a silicon crystal, with which the precision of resistance control by a dopant of the silicon crystal is improved, the yield of the silicon crystal is enhanced, and the cost of raw materials is reduced, to provide a method for manufacturing the crucible, and to provide a method for growing the silicon crystal.;SOLUTION: The crucible C for growing a silicon crystal is constituted of a silicon-impregnated SiC layer C1 provided at the surface brought into contact with a silicon melt being stored, a melt repelling layer C2, a quartz glass layer C3, and a carbon layer C4. A method for producing the silicon-impregnated SiC layer C1 includes: an SiC powder molding process of molding a raw material SiC powder into a shape having a space storable of a silicon me a firing process of forming a porous SiC layer by firing the molded SiC powder molding; and a silicon impregnation process of forming the silicon-impregnated SiC layer by impregnating the porous SiC layer with molten silicon. The silicon impregnation process may be performed when a silicon raw material is heated and melted before the silicon crystal is pulled.;COPYRIGHT: (C)2011,JPO&INPIT