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Coating method of quarts crucible for silicon crystal growth and quarts crucible for silicon crystal growth
Coating method of quarts crucible for silicon crystal growth and quarts crucible for silicon crystal growth
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机译:用于硅晶体生长的石英坩埚的涂覆方法和用于硅晶体生长的石英坩埚
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摘要
A coating method for coating a crucible and a quartz crucible for growing a silicon crystal are provided. In the coating method, a bubble-free quartz layer which is 80 μm to 4 mm thick is formed on an inner surface of a crucible for growing a silicon crystal, and the surface of the bubble-free quartz layer is covered with alkaline earth hydroxide, following which heating is performed to a temperature at which the surface becomes devitrified. The surface may be covered by immersing the inner surface in a solution of the alkaline earth hydroxide. The heating may be performed before the crucible for growing silicon crystal is filled with a solid raw material to be melted.
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