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Tin-Doped Indium Oxide Thin Films And Method For Making Same

机译:掺锡氧化铟薄膜及其制备方法

摘要

The tin-doped indium oxide thin film in accordance with the present invention has a tin-doped indium oxide, yttrium ions and europium ions, wherein the yttrium ions are proportional to 0.1-10 mol % of the tin-doped indium oxide while the europium ions proportional to 0.05-5 mol % of the tin-doped indium oxide.;The method in accordance with the present invention comprises preparing a tin-doped indium oxide; and doping yttrium ions proportional to 0.1-10 mol % of the tin-doped indium and europium ions proportional to 0.05-5 mol % of the tin-doped indium oxide in the tin-doped indium oxide using a film-manufacturing method.
机译:根据本发明的掺锡氧化铟薄膜具有掺锡氧化铟,钇离子和euro离子,其中钇离子与掺锡氧化铟的0.1-10mol%成正比,而the占与所述锡掺杂的氧化铟成比例为0.05-5mol%的离子;根据本发明的方法包括制备锡掺杂的氧化铟。使用膜制造方法,在掺锡的氧化铟中掺杂与掺锡的铟的0.1-10mol%成比例的钇离子和与掺锡的氧化铟的0.05-5mol%成比例的euro离子。

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