Implementing low power data predicting local evaluation for double pumped arrays

摘要

A method and static random access memory (SRAM) circuit for implementing low power data predicting local evaluation for double pumped arrays, and a design structure on which the subject circuit reside are provided. A novel variation of a domino read local evaluation circuit accurately predicts the write data for the next cycle. The domino read local evaluation circuit uses static write data set up prior to a write enable signal to determine the value of the data that is being written into the array. When the data being written to the array matches the data last read the local bitlines stay in their previous state. When the data being written is opposite of the data last read then the bit lines are precharged to the precharge value.