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METHODS OF ENHANCING PERFORMANCE OF FIELD-EFFECT TRANSISTORS AND FIELD-EFFECT TRANSISTORS MADE THEREBY
METHODS OF ENHANCING PERFORMANCE OF FIELD-EFFECT TRANSISTORS AND FIELD-EFFECT TRANSISTORS MADE THEREBY
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机译:增强场效应晶体管性能的方法及其由此产生的场效应晶体管
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摘要
Methods of enhancing the performance of a field-effect transistor (FET) by providing a percolating network of metallic islands to the inversion layer of the FET so as to effectively reduce the channel length of the FET. The metal islands can be provided in a number of ways, including Volmer- Weber metallic film growth, breaking apart continuous metallic film, patterning metallic coating, dispersing metallic particles in a semiconducting material, applying a layer of composite particles having metallic cores and semiconducting shells and co-sputtering metallic and semiconducting materials, among others. FETs made using disclosed methods have a novel channel structures that include metallic islands spaced apart by semiconducting material.
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