首页> 外国专利> PIEZOELECTRIC THIN FILM, METHOD FOR MANUFACTURING SAME, INKJET HEAD, METHOD FOR FORMING IMAGE USING INKJET HEAD, ANGULAR VELOCITY SENSOR, METHOD FOR MEASURING ANGULAR VELOCITY USING ANGULAR VELOCITY SENSOR, PIEZOELECTRIC POWER GENERATION ELEMENT, AND METHOD FOR GENERATING POWER USING PIEZOELECTRIC POWER GENERATION ELEMENT

PIEZOELECTRIC THIN FILM, METHOD FOR MANUFACTURING SAME, INKJET HEAD, METHOD FOR FORMING IMAGE USING INKJET HEAD, ANGULAR VELOCITY SENSOR, METHOD FOR MEASURING ANGULAR VELOCITY USING ANGULAR VELOCITY SENSOR, PIEZOELECTRIC POWER GENERATION ELEMENT, AND METHOD FOR GENERATING POWER USING PIEZOELECTRIC POWER GENERATION ELEMENT

机译:压电薄膜,制造相同方法的方法,喷墨头,使用喷墨头形成图像的方法,角速度传感器,使用角速度传感器测量角速度的方法,压电发电法,发电能量产生元件

摘要

The objective of the present invention is to provide a lead-free piezoelectric thin film containing a lead-free ferroelectric material and having a low dielectric loss and the same high piezoelectric performance as PZT, and to provide a method for manufacturing the lead-free piezoelectric thin film. This piezoelectric thin film has a layered structure. The layered structure has an electrode film and a (1 - x)(Na, Bi)TiO3 - xBaTiO3film having an orthorhombic crystal structure (where x represents a value from 0.03 to 0.15, inclusive).
机译:本发明的目的是提供一种包含无铅铁电材料并且具有低介电损耗和与PZT相同的高压电性能的无铅压电薄膜,并提供一种制造无铅压电体的方法。薄膜。该压电体薄膜具有层状结构。该层状结构具有电极膜和具有正交晶体结构的(1-x)(Na,Bi)TiO 3 -xBaTiO 3 膜(其中x代表值从0.03到0.15(含)。

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