METHOD FOR CONTROLLING THE CRYSTALLINITY OF A MICRO-CRYSTAL SILICON THIN FILM DEPOSITED BY ATMOSPHERIC PRESSURE PLASMA CVD

摘要

PURPOSE: A method for controlling the crystallinity of a micro-crystal silicon thin film deposited by atmospheric pressure plasma CVD is provided to gently linearly change the crystallinity of a silicon thin film, thereby simplifying crystallinity control.;CONSTITUTION: A method for controlling the crystallinity of a micro-crystal silicon thin film deposited by atmospheric pressure plasma CVD is as follows. Reaction gas for forming silicon and inert gas are injected into a CVD(Chemical Vapor Deposition) chamber(10) in which an electrode(20) is arranged on a substrate(30). Plasma, which is generated between the substrate and the electrode by applying power to the electrode, induces chemical reaction of the reaction gas so that a silicon thin film is formed on the substrate. During the silicon thin film forming process, the crystallinity of a micro-crystal silicon thin film is controlled by regulating the moving speed of the substrate to the electrode.;COPYRIGHT KIPO 2012